AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or.
TM
IDC05S120E
SiC Schottky Diode
Applications:
•
•
•
• Motor Drives / Solar Inverters High Voltage CCM PFC Switch Mode Power Supplies High Voltage Multipliers
A
Revolutionary Semiconductor Material Silicon Carbide
• Switching Behaviour Benchmark
• No Reverse Recovery / No Forward Recovery
• Temperature Independent Switching Behaviour
• Qualified According to JEDEC1) Based on Target Applications www.DataSheet4U.net
•
C
Chip Type
IDC05S120E
VBR 1200V
IF 5A
Die Size 1.692 x 1.692 mm2
Package sawn on foil
Mechanical parameters Raster size Anode pad size Area total Thickness Wafer size .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IDC05S60C |
Infineon Technologies |
2nd generation thinQ! SiC Schottky Diode | |
2 | IDC05S60CE |
Infineon Technologies |
Schottky Diode | |
3 | IDC04S60C |
Infineon Technologies |
2nd generation thinQ! SiC Schottky Diode | |
4 | IDC04S60CE |
Infineon Technologies |
Schottky Diode | |
5 | IDC06S60C |
Infineon Technologies |
2nd generation thinQ! SiC Schottky Diode | |
6 | IDC06S60CE |
Infineon Technologies |
Schottky Diode | |
7 | IDC08D120T6M |
Infineon |
Diode | |
8 | IDC08D120T8M |
Infineon |
Diode | |
9 | IDC08S120E |
Infineon Technologies |
Schottky Diode | |
10 | IDC08S60C |
Infineon Technologies |
2nd generation thinQ! SiC Schottky Diode | |
11 | IDC08S60CE |
Infineon Technologies |
Schottky Diode | |
12 | IDC-2512 |
Vishay Siliconix |
High Current / Surface Mount Inductor |