. . . . . . . 1 Maximum ratings . 3 Thermal characteristics. . . . . . ..
• OptiMOSTM power MOSFET for automotive applications
• N-channel - Enhancement mode - Normal Level
• Extended qualification beyond AEC-Q101
• Enhanced electrical testing
• Robust design
• MSL2a up to 260°C peak reflow
• 175°C operating temperature
• RoHS compliant
• 100% Avalanche tested
Potential Applications
General automotive applications.
Product Validation
Qualified for automotive applications. Product validation according to AEC-Q101.
Product Summary
VDS RDS(on) ID (chip limited)
40 V 0.51 mΩ 455 A
Type IAUAN04S7N005
Package PG-HSOF-5-1
PG-HSOF-5-1
Marking 7N04N005
Data Sheet
Pl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IAUAN04S7N004 |
Infineon |
Automotive MOSFET | |
2 | IAUA120N04S5N014 |
Infineon |
Automotive MOSFET | |
3 | IAUA180N04S5N012 |
Infineon |
Automotive MOSFET | |
4 | IAUA180N08S5N026 |
Infineon |
Automotive MOSFET | |
5 | IAUA180N10S5N029 |
Infineon |
Automotive MOSFET | |
6 | IAUA210N10S5N024 |
Infineon |
Automotive MOSFET | |
7 | IAUA250N04S6N007E |
Infineon |
Automotive MOSFET | |
8 | IAUC100N04S6L020 |
Infineon |
Power Transistor | |
9 | IAUC100N04S6L025 |
Infineon |
Power Transistor | |
10 | IAUC100N04S6N015 |
Infineon |
Power Transistor | |
11 | IAUC100N04S6N028 |
Infineon |
Power Transistor | |
12 | IAUC100N08S5N034 |
Infineon |
Power Transistor |