. . . .1. . . . . . . Maximum ratings . . . . . . . .3.
• OptiMOS™ power MOSFET for automotive applications
• N-channel
– Enhancement mode
– Normal Level
• Extended qualification beyond AEC-Q101
• Enhanced electrical testing
• Robust design
• MSL3 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Potential applications
General automotive applications.
Product validation
Qualified for automotive applications. Product validation according to AEC-Q101.
Product Summary
VDS RDS(on),max ID (chip limited)
Type IAUA250N04S6N007E
40 V 0.7 mΩ 380 A
Package PG-HSOF-5-1
PG-HSOF-5-1
Marking 6N04R7E.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IAUA210N10S5N024 |
Infineon |
Automotive MOSFET | |
2 | IAUA120N04S5N014 |
Infineon |
Automotive MOSFET | |
3 | IAUA180N04S5N012 |
Infineon |
Automotive MOSFET | |
4 | IAUA180N08S5N026 |
Infineon |
Automotive MOSFET | |
5 | IAUA180N10S5N029 |
Infineon |
Automotive MOSFET | |
6 | IAUAN04S7N004 |
Infineon |
Automotive MOSFET | |
7 | IAUAN04S7N005 |
Infineon |
Automotive MOSFET | |
8 | IAUC100N04S6L020 |
Infineon |
Power Transistor | |
9 | IAUC100N04S6L025 |
Infineon |
Power Transistor | |
10 | IAUC100N04S6N015 |
Infineon |
Power Transistor | |
11 | IAUC100N04S6N028 |
Infineon |
Power Transistor | |
12 | IAUC100N08S5N034 |
Infineon |
Power Transistor |