HYB5118160BSJ-60 - Siemens

HYB5118160BSJ-60 1M x 16-Bit Dynamic RAM

5V 5V 50 ns FPM-DRAM 60 ns FPM-DRAM 3.3 V 50 ns FPM-DRAM 3.3 V 60 ns FPM-DRAM VCC VSS N.C. Semiconductor Group 2 1998-10-01 HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 1M × 16 DRAM P-SOJ-42 (400 mil) V CC I/O1 I/O2 I/O3 I/O4 V CC I/O5 I/O6 I/O7 I/O8 N.C. N.C. WE RAS N.C. N.C. A0 A1 A2 A3 V CC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 V.

Features

18160 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized as 1 048 576 words by 16-bits. The HYB 5(3)118)160 utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)118160 to be packaged in a standard SOJ-42 plastic package with 400 mil width. This package provide high system bit densities and is compatible with commonly used automatic testing and insertion equipment. Ordering Information Type HYB 5118160BSJ-50 H.