HYB5118160BSJ-60 |
Part Number | HYB5118160BSJ-60 |
Manufacturer | Siemens |
Description | 5V 5V 50 ns FPM-DRAM 60 ns FPM-DRAM 3.3 V 50 ns FPM-DRAM 3.3 V 60 ns FPM-DRAM VCC VSS N.C. Semiconductor Group 2 1998-10-01 HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 1M × 16 DRAM P-SOJ-42 (4... |
Features |
18160 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized as 1 048 576 words by 16-bits. The HYB 5(3)118)160 utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)118160 to be packaged in a standard SOJ-42 plastic package with 400 mil width. This package provide high system bit densities and is compatible with commonly used automatic testing and insertion equipment. Ordering Information Type HYB 5118160BSJ-50 H... |
Document |
HYB5118160BSJ-60 Data Sheet
PDF 191.69KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | HYB5118160BSJ-50 |
Siemens |
1M x 16-Bit Dynamic RAM | |
2 | HYB5118160BSJ-70 |
Siemens |
1M x 16-Bit Dynamic RAM | |
3 | HYB5118165BJ-50 |
Siemens |
1M x 16-Bit Dynamic RAM 1k & 4k Refresh | |
4 | HYB5118165BJ-60 |
Siemens |
1M x 16-Bit Dynamic RAM 1k & 4k Refresh | |
5 | HYB5118165BJ-70 |
Siemens |
1M x 16-Bit Dynamic RAM 1k & 4k Refresh |