P-SOJ-42-1 400 mil DRAM (access time 50 ns) P-SOJ-42-1 400 mil DRAM (access time 60 ns) P-SOJ-42-1 400 mil DRAM (access time 70 ns) VCC VSS N.C. Semiconductor Group 2 HYB 5118160BSJ-50/-60/-70 1M x 16-DRAM P-SOJ-42 (400 mil) Vcc I/O1 I/O2 I/O3 I/O4 Vcc I/O5 I/O6 I/O7 I/O8 N.C. N.C. WE RAS N.C. N.C. A0 A1 A2 A3 Vcc 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 1.
include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5118160BSJ-50 HYB 5118160BSJ-60 HYB 5118160BSJ-70 Pin Names A0 to A9 A0 to A9 RAS OE I/O1-I/O16 UCAS LCAS WE Row Address Inputs Column Addess Inputs Row Address Strobe Output Enable Data Input/Output Upper Column Address Strobe Lower Column Address Strobe Read/Write Input Power Supply (+ 5 V) Ground (0 V) not connected Ordering Code Q67100-Q1072 Q67100-Q1073 Q67100-Q1074 Package Descriptions P-SOJ-42-1 400 mil DRAM (access time 50 ns) P.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HYB5118160BSJ-60 |
Siemens |
1M x 16-Bit Dynamic RAM | |
2 | HYB5118160BSJ-70 |
Siemens |
1M x 16-Bit Dynamic RAM | |
3 | HYB5118165BJ-50 |
Siemens |
1M x 16-Bit Dynamic RAM 1k & 4k Refresh | |
4 | HYB5118165BJ-60 |
Siemens |
1M x 16-Bit Dynamic RAM 1k & 4k Refresh | |
5 | HYB5118165BJ-70 |
Siemens |
1M x 16-Bit Dynamic RAM 1k & 4k Refresh | |
6 | HYB5118165BSJ-50 |
Siemens |
1M x 16-Bit Dynamic RAM 1k Refresh | |
7 | HYB5118165BSJ-60 |
Siemens |
1M x 16-Bit Dynamic RAM 1k Refresh | |
8 | HYB5118165BST-50 |
Siemens |
1M x 16-Bit Dynamic RAM 1k Refresh | |
9 | HYB5118165BST-60 |
Siemens |
1M x 16-Bit Dynamic RAM 1k Refresh | |
10 | HYB511000BJ- |
Siemens |
1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM | |
11 | HYB511000BJ-50 |
Siemens |
1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM | |
12 | HYB511000BJ-60 |
Siemens |
1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM |