HY27UH088G2M - Hynix Semiconductor

HY27UH088G2M 8G-Bit NAND Flash Memory

The HYNIX HY27UH088G(2/D)M series is a 1Gx8bit with spare 32Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The.

Features

9) Change AC Characteristics - Errata is deleted. tWC Before After 0.4 - tR is change tR Before After 25us 30us 60ns 50ns tWP 35ns 25ns tWH 20ns 15ns Sep. 16. 2005 Preliminary 10) Change DC Characteristics (Table 8) - Operation Current ICC1 Typ Before After 30 40 ICC2 Typ 30 40 ICC3 Typ 30 40 ILI Max ILO Max ± 20 ± 20 ± 40 ± 40 0.5 1) Delete Concurrent Operation. Oct. 05. 2005 Preliminary Rev 0.5 / Oct. 2005 2 Preliminary HY27UH088G(2/D)M Series 8Gbit (1Gx8bit) NAND Flash FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND I.