HY27UH088G2M |
Part Number | HY27UH088G2M |
Manufacturer | Hynix Semiconductor |
Description | The HYNIX HY27UH088G(2/D)M series is a 1Gx8bit with spare 32Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid stat... |
Features |
9) Change AC Characteristics - Errata is deleted. tWC Before After 0.4 - tR is change tR Before After 25us 30us 60ns 50ns tWP 35ns 25ns tWH 20ns 15ns Sep. 16. 2005 Preliminary
10) Change DC Characteristics (Table 8) - Operation Current ICC1 Typ Before After 30 40 ICC2 Typ 30 40 ICC3 Typ 30 40 ILI Max ILO Max
± 20 ± 20 ± 40 ± 40
0.5
1) Delete Concurrent Operation.
Oct. 05. 2005
Preliminary
Rev 0.5 / Oct. 2005
2
Preliminary HY27UH088G(2/D)M Series 8Gbit (1Gx8bit) NAND Flash FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND I... |
Document |
HY27UH088G2M Data Sheet
PDF 463.12KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HY27UH088GDM |
Hynix Semiconductor |
8G-Bit NAND Flash Memory | |
2 | HY27UH084G2M |
Hynix Semiconductor |
(HY27xHxx4G2M Series) 4G-Bit NAND Flash Memory | |
3 | HY27UH08AG5B |
Hynix |
16Gbit (2Gx8bit) NAND Flash | |
4 | HY27UH08AG5M |
Hynix |
16Gb NAND FLASH | |
5 | HY27UH08AGDM |
Hynix |
16Gb NAND FLASH |