HY27UH088G2M Hynix Semiconductor 8G-Bit NAND Flash Memory Datasheet, en stock, prix

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HY27UH088G2M

Hynix Semiconductor
HY27UH088G2M
HY27UH088G2M HY27UH088G2M
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Part Number HY27UH088G2M
Manufacturer Hynix Semiconductor
Description The HYNIX HY27UH088G(2/D)M series is a 1Gx8bit with spare 32Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid stat...
Features 9) Change AC Characteristics - Errata is deleted. tWC Before After 0.4 - tR is change tR Before After 25us 30us 60ns 50ns tWP 35ns 25ns tWH 20ns 15ns Sep. 16. 2005 Preliminary 10) Change DC Characteristics (Table 8) - Operation Current ICC1 Typ Before After 30 40 ICC2 Typ 30 40 ICC3 Typ 30 40 ILI Max ILO Max ± 20 ± 20 ± 40 ± 40 0.5 1) Delete Concurrent Operation. Oct. 05. 2005 Preliminary Rev 0.5 / Oct. 2005 2 Preliminary HY27UH088G(2/D)M Series 8Gbit (1Gx8bit) NAND Flash FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND I...

Document Datasheet HY27UH088G2M Data Sheet
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