HUF75639S3R4851 - Intersil Corporation

HUF75639S3R4851 N-Channel MOSFET

HUF75639S3R4851 TM Data Sheet April 2000 File Number 4854 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of .

Features

• 56A, 115V
• Simulation Models - Temperature Compensated PSPICETM and SABER© Electrical Models - Spice and Saber Thermal Impedance Models - www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve Ordering Information PART NUMBER HUF75639S3R4851 PACKAGE TO-262AA R4851 BRAND
• Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” NOTE: When ordering, use the entire part number. Packaging JEDEC TO-262AA SOURCE DRAIN GATE Symbol D G S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF75639S3R4851 UNITS V V V A 115 115.