HUF75631P3 - Intersil Corporation

HUF75631P3 N-Channel MOSFET

HUF75631P3 Data Sheet October 1999 File Number 4720.1 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.semi.Int.

Features

• Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V
• Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.semi.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve DRAIN (FLANGE) HUF75631P3 Symbol D Ordering Information PART NUMBER HUF75631P3 G PACKAGE TO-220AB BRAND 75631P S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF75631P3 UNITS V V V A A 100 100 ±20 33 23 Figure 4 Figures 6, 14, 15 120 0.80 -55 to 175 300 260 W W/oC oC oC oC Drain to Source Voltage (Note 1) . ..