HUF75631S3ST - Fairchild Semiconductor

HUF75631S3ST N-Channel MOSFET

HUF75631P3, HUF75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET® Power MOSFETs Packaging JEDEC TO-220AB SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) JEDEC TO-263AB DRAIN (FLANGE) Features • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - .

Features

• Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V
• Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve HUF75631P3 HUF75631S3ST Symbol D Ordering Information PART NUMBER HUF75631P3 G PACKAGE TO-220AB TO-263AB BRAND 75631P 75631S HUF75631S3ST S NOTE: When ordering, use the entire part number, e.g., HUF75631S3ST. TC = 25oC, Unless Otherwise Specified HUF75631P3 HUF75631S3ST UNITS V V V A A Absolute Maximum Ratings Drain to Source V.