The HMC637BPM5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), cascode distributed power amplifier. The device is self biased in normal operation and features optional bias control for quiescent current (IDQ) adjustment and for second-order intercept (IP2) and third-order.
P1dB output power: 28 dBm typical Gain: 15.5 dB typical Output IP3: 39 dBm typical Self biased at VDD = 12 V at 345 mA typical Optional bias control on VGG1 for IDQ adjustment Optional bias control on VGG2 for IP2 and IP3 optimization 50 Ω matched input/output 32-lead, 5 mm × 5 mm LFCSP package: 25 mm2 APPLICATIONS Military and space Test instrumentation GENERAL DESCRIPTION The HMC637BPM5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), cascode distributed power amplifier. The device is self biased in normal.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HMC637A |
Analog Devices |
GaAs MMIC 1 WATT POWER AMPLIFIER | |
2 | HMC637ALP5E |
Analog Devices |
GaAs pHEMT MMIC 1-WATT POWER AMPLIFIER | |
3 | HMC6300 |
Analog Devices |
60GHz Millimeterwave Transmitter | |
4 | HMC6301 |
Analog Devices |
Millimeterwave Receiver | |
5 | HMC630LP3 |
Analog Devices |
GaAs HBT VECTOR MODULATOR | |
6 | HMC630LP3E |
Analog Devices |
GaAs HBT VECTOR MODULATOR | |
7 | HMC631LP3 |
Analog Devices |
GaAs HBT VECTOR MODULATOR | |
8 | HMC631LP3E |
Analog Devices |
GaAs HBT VECTOR MODULATOR | |
9 | HMC632LP5 |
Analog Devices |
MMIC VCO | |
10 | HMC632LP5E |
Analog Devices |
MMIC VCO | |
11 | HMC633 |
Analog Devices |
GaAs PHEMT MMIC DRIVER AMPLIFIER | |
12 | HMC633LC4 |
Analog Devices |
GaAs PHEMT MMIC DRIVER AMPLIFIER |