HMC632LP5E - Analog Devices

HMC632LP5E MMIC VCO

The HMC632LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC632LP5(E) integrates resonators, negative resistance devices, varactor diodes and features halffrequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power outp.

Features

Dual Output: Fo = 14.25 - 15.65 GHz Fo/2 = 7.125 - 7.825 GHz Pout: +9 dBm Phase Noise: -107 dBc/Hz @100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm² General Description The HMC632LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC632LP5(E) integrates resonators, negative resistance devices, varactor diodes and features halffrequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +9 dBm typical from a +5V supply voltag.