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HMC637BPM5E |
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| Part Number | HMC637BPM5E |
| Manufacturer | Analog Devices (https://www.analog.com/) |
| Description | The HMC637BPM5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), cascode distributed power amplifier. The device i... |
| Features |
P1dB output power: 28 dBm typical Gain: 15.5 dB typical Output IP3: 39 dBm typical Self biased at VDD = 12 V at 345 mA typical
Optional bias control on VGG1 for IDQ adjustment Optional bias control on VGG2 for IP2 and IP3 optimization 50 Ω matched input/output 32-lead, 5 mm × 5 mm LFCSP package: 25 mm2
APPLICATIONS
Military and space Test instrumentation
GENERAL DESCRIPTION
The HMC637BPM5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), cascode distributed power amplifier. The device is self biased in normal... |
| Document |
 HMC637BPM5E Data Sheet
PDF 555.40KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HMC637A |
Analog Devices |
GaAs MMIC 1 WATT POWER AMPLIFIER |
|
| 2 | HMC637ALP5E |
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GaAs pHEMT MMIC 1-WATT POWER AMPLIFIER |
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| 3 | HMC6300 |
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60GHz Millimeterwave Transmitter |
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| 4 | HMC6301 |
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Millimeterwave Receiver |
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| 5 | HMC630LP3 |
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GaAs HBT VECTOR MODULATOR |
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