HM63921 Series 2048-word × 9-bit CMOS Parallel In-Out FIFO Memory The HM63921 is a first-in, first-out memory that utilizes a high performance static RAM array with internal algorithm that controls, monitors and declares status of the memory by empty flag, full flag and half-full flag, to prevent data overflow or underflow. Expansion logic warrants unlimited.
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• First-in, first-out dual port memory 2 k × 9 organization Low-power CMOS 1.3 micron technology Asynchronous and simultaneous read and write Fully expandable in depth and/or width Single 5 V power supply Empty and full warning flags Half-full flag Access time: 22/25/35 ns Package: 300-mil 28-pin plastic DIP package 300-mil 28-pin plastic SOJ package
Ordering Information
Type name HM63921P-20R HM63921P-25 HM63921P-35 Access time 22 ns 25 ns 35 ns 300-mil 28-pin (CP-28DN) Package 300-mil 28-pin (DP-28NA)
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HM63021 |
Renesas Technology |
2048-word x 8-bit Line Memory | |
2 | HM63021P-34 |
ETC |
CMOS 16K Line Memory | |
3 | HM6313 |
H&M semi |
Step-up DC-DC Converter | |
4 | HM6383 |
H&M semi |
Synchronous Boost converter | |
5 | HM6-6617B883 |
Intersil Corporation |
2K x 8 CMOS PROM | |
6 | HM6-6642-9 |
Intersil Corporation |
512 x 8 CMOS PROM | |
7 | HM6-6642B-9 |
Intersil Corporation |
512 x 8 CMOS PROM | |
8 | HM60 |
RCD |
PRECISION METAL FILM RESISTORS | |
9 | HM60N03 |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
10 | HM6100 |
H&M Semiconductor |
Ultra Low Power Battery Monitor | |
11 | HM6116 |
Hitachi Semiconductor |
2048-word X 8bit High Speed CMOS Static RAM | |
12 | HM6116 |
MHS |
2K x 8 GENERAL PURPOSE CMOS SRAM |