FEATURES The HM6313 is a highly efficient fix frequency synchronous step-up DC/DC converter. Output voltage of the device is adjustable. Power dissipation during operation is only 40μA typical and drops to less than 1μA in shutdown. The 0.85V to 5V input voltage range makes the HM6313 ideally suitable for single cell Li-ion battery, single or dual AA batte.
The HM6313 is a highly efficient fix frequency synchronous step-up DC/DC converter. Output voltage of the device is adjustable. Power dissipation during operation is only 40μA typical and drops to less than 1μA in shutdown. The 0.85V to 5V input voltage range makes the HM6313 ideally suitable for single cell Li-ion battery, single or dual AA battery voltage step-up applications. Automatic PFM Mode operation increases efficiency at light loads, further extend battery life. Switching frequency is internally set at 1.2MHz, design for use of small value surface mount inductor, input and output ca.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HM63021 |
Renesas Technology |
2048-word x 8-bit Line Memory | |
2 | HM63021P-34 |
ETC |
CMOS 16K Line Memory | |
3 | HM6383 |
H&M semi |
Synchronous Boost converter | |
4 | HM63921 |
ETC |
2048-word x 9-bit CMOS Parallel In-Out FIFO Memory | |
5 | HM6-6617B883 |
Intersil Corporation |
2K x 8 CMOS PROM | |
6 | HM6-6642-9 |
Intersil Corporation |
512 x 8 CMOS PROM | |
7 | HM6-6642B-9 |
Intersil Corporation |
512 x 8 CMOS PROM | |
8 | HM60 |
RCD |
PRECISION METAL FILM RESISTORS | |
9 | HM60N03 |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
10 | HM6100 |
H&M Semiconductor |
Ultra Low Power Battery Monitor | |
11 | HM6116 |
Hitachi Semiconductor |
2048-word X 8bit High Speed CMOS Static RAM | |
12 | HM6116 |
MHS |
2K x 8 GENERAL PURPOSE CMOS SRAM |