The HM6383 is a step-up converter that provides a boosted output voltage from a low voltage source. Because of its proprietary design, it starts up at a very low input voltage down to 0.9V, and only consumes 15uA at standby, making it an ideal choice for single cell alkaline/NiMH battery operations. A switching frequency of 1MHz minimizes solution footprint .
Efficiency up to 95%@Vin=2.7V, Vout=3.3V
Typical 15uA standby current
1MHz Switching Frequency allows small
inductor and output cap
Input boost-strapping allows using small or
no input cap
Low Vin Start-up Voltage down to 0.9V Ideal
for Single Alkaline Cell operations
Maximum Output Current up to 300mA
Low Noise PWM control
Internally Compensated Current Mode Control
Internal Synchronous Rectifier
Available in SOT23-3、SOT23-5 and SOT89-3
APPLICATIONS
One to Three Cell Battery Operated Devices
Medical Instruments
Bluetooth Headsets
Flash-Based MP3 Players
Noise Can.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HM63021 |
Renesas Technology |
2048-word x 8-bit Line Memory | |
2 | HM63021P-34 |
ETC |
CMOS 16K Line Memory | |
3 | HM6313 |
H&M semi |
Step-up DC-DC Converter | |
4 | HM63921 |
ETC |
2048-word x 9-bit CMOS Parallel In-Out FIFO Memory | |
5 | HM6-6617B883 |
Intersil Corporation |
2K x 8 CMOS PROM | |
6 | HM6-6642-9 |
Intersil Corporation |
512 x 8 CMOS PROM | |
7 | HM6-6642B-9 |
Intersil Corporation |
512 x 8 CMOS PROM | |
8 | HM60 |
RCD |
PRECISION METAL FILM RESISTORS | |
9 | HM60N03 |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
10 | HM6100 |
H&M Semiconductor |
Ultra Low Power Battery Monitor | |
11 | HM6116 |
Hitachi Semiconductor |
2048-word X 8bit High Speed CMOS Static RAM | |
12 | HM6116 |
MHS |
2K x 8 GENERAL PURPOSE CMOS SRAM |