The HM4953B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. DD GG GENERAL FEATURES ● VDS = -20V,ID = -5A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V ● High Power and current handing capability ● L.
● VDS = -20V,ID = -5A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
SS Schematic diagram
HM4953B
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
HM4953B
HM4953B
SOP-8
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HM4953 |
H&M Semiconductor |
Dual P-Channel Enhancement Mode Power MOSFET | |
2 | HM4953A |
H&M Semiconductor |
Dual P-Channel Enhancement Mode Power MOSFET | |
3 | HM4953C |
H&M Semiconductor |
Dual P-Channel Enhancement Mode Power MOSFET | |
4 | HM4953D |
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P-Channel Enhancement Mode Power MOSFET | |
5 | HM491C |
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PFM boost DC-DC converter | |
6 | HM4922 |
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20V Full-Bridge of MOSFET | |
7 | HM4963 |
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Dual P-Channel Enhancement Mode Power MOSFET | |
8 | HM4-6514-B |
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9 | HM4-6516-9 |
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10 | HM4-65162-9 |
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11 | HM4-65162B-9 |
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2K x 8 Asynchronous CMOS Static RAM | |
12 | HM4-65162C-9 |
Intersil Corporation |
2K x 8 Asynchronous CMOS Static RAM |