HM4-6514-B - Intersil Corporation

HM4-6514-B 1024 x 4 CMOS RAM

The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On-chip latches are provided for addresses allowing efficient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in.

Features

• Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max
• Low Power Operation . . . . . . . . . . . . . 35mW/MHz Max
• Data Retention . . . . . . . . . . . . . . . . . . . . . . . at 2.0V Min
• TTL Compatible Input/Output
• Common Data Input/Output
• Three-State Output
• Standard JEDEC Pinout
• Fast Access Time. . . . . . . . . . . . . . . . . . 120/200ns Max
• 18 Pin Package for High Density
• On-Chip Address Register
• Gated Inputs - No Pull Up or Pull Down Resistors Required Ordering Information 120ns HM3-6514S-9 HM1-6514S-9 24502BVA 8102402VA 200ns HM3-6514B-9 HM1-6514B-9 8102.