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The HM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V D1 G1 G2 D2 S1 S2 Schematic diagram HM4953 ● Hig.
● VDS = -30V,ID = -5.1A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V
D1 G1
G2
D2
S1 S2
Schematic diagram
HM4953
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
HM4953
HM4953
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Ga.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HM4953A |
H&M Semiconductor |
Dual P-Channel Enhancement Mode Power MOSFET |
|
| 2 | HM4953B |
H&M Semiconductor |
Dual P-Channel Enhancement Mode Power MOSFET |
|
| 3 | HM4953C |
H&M Semiconductor |
Dual P-Channel Enhancement Mode Power MOSFET |
|
| 4 | HM4953D |
H&M Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
|
| 5 | HM491C |
H&M Semiconductor |
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|
| 6 | HM4922 |
H&M Semiconductor |
20V Full-Bridge of MOSFET |
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| 7 | HM4963 |
H&M Semiconductor |
Dual P-Channel Enhancement Mode Power MOSFET |
|
| 8 | HM4-6514-B |
Intersil Corporation |
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|
| 9 | HM4-6516-9 |
Intersil Corporation |
2K x 8 CMOS RAM |
|
| 10 | HM4-65162-9 |
Intersil Corporation |
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|
| 11 | HM4-65162B-9 |
Intersil Corporation |
2K x 8 Asynchronous CMOS Static RAM |
|
| 12 | HM4-65162C-9 |
Intersil Corporation |
2K x 8 Asynchronous CMOS Static RAM |
|