HM-6518883 1024 x 1 CMOS RAM Datasheet

HM-6518883 1024 x 1 CMOS RAM

The HM-6518/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. On chip latches are provided for address and data outputs allowing efﬁcient interfacing with microprocessor systems. The data output buffers can be forced .

Features

• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
• Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max
• Low Power Operation . . . . . . . . . . . . . 20mW/MHz Max
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . 180ns Max
• Data Retention . . . . . . . . . . . . . . . . . . . . . . . .at 2.0V Min
• TTL Compatible Input/Output
• High Output Drive - 2 TTL Loads
• High Noise Immunity
• On-Chip Address Register
• Two-Chip Selects for Easy Array Expansion
• Three-State Output Ordering Information P.

No.	Partie #	Fabricant	Description
1	HM-6518	Intersil Corporation	1024 x 1 CMOS RAM
2	HM-6514	Intersil Corporation	1024 x 4 CMOS RAM
3	HM-6516	Intersil Corporation	2K x 8 CMOS RAM
4	HM-6516-883	Intersil Corporation	2K x 8 CMOS RAM
5	HM-65161	MHS	2K X 8 General Purpose CMOS SRAM
6	HM-65162	Intersil Corporation	2K x 8 Asynchronous CMOS Static RAM
7	HM-6504	Intersil Corporation	4096 x 1 CMOS RAM
8	HM-6504883	Intersil Corporation	4096 x 1 CMOS RAM
9	HM-6508	Intersil Corporation	1024 x 1 CMOS RAM
10	HM-6508883	Intersil Corporation	1024 x 1 CMOS RAM
11	HM-65262	Intersil Corporation	16K x 1 Asynchronous CMOS Static RAM
12	HM-6551-883	Intersil	256 x 4 CMOS RAM

HM-6518883 - Intersil Corporation

HM-6518883 1024 x 1 CMOS RAM

Features

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