HM-6508 1024 x 1 CMOS RAM Datasheet

HM-6508 1024 x 1 CMOS RAM

The HM-6508/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. On chip latches are provided for address allowing efﬁcient interfacing with microprocessor systems. The data output buffers can be forced to a high impedan.

Features

• This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
• Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max
• Low Power Operation . . . . . . . . . . . . . 20mW/MHz Max
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . 180ns Max
• Data Retention . . . . . . . . . . . . . . . . . . . . . . . . . .2.0V Min
• TTL Compatible Input/Output
• High Output Drive - 2 TTL Loads
• On-Chip Address Register Ordering Information PACKAGE CERDIP TEMP. RANGE 180ns 250ns PKG. NO. F16.3 -55oC to +125oC HM1HM16508B/883 .

No.	Partie #	Fabricant	Description
1	HM-6504	Intersil Corporation	4096 x 1 CMOS RAM
2	HM-6504883	Intersil Corporation	4096 x 1 CMOS RAM
3	HM-6508883	Intersil Corporation	1024 x 1 CMOS RAM
4	HM-6514	Intersil Corporation	1024 x 4 CMOS RAM
5	HM-6516	Intersil Corporation	2K x 8 CMOS RAM
6	HM-6516-883	Intersil Corporation	2K x 8 CMOS RAM
7	HM-65161	MHS	2K X 8 General Purpose CMOS SRAM
8	HM-65162	Intersil Corporation	2K x 8 Asynchronous CMOS Static RAM
9	HM-6518	Intersil Corporation	1024 x 1 CMOS RAM
10	HM-6518883	Intersil Corporation	1024 x 1 CMOS RAM
11	HM-65262	Intersil Corporation	16K x 1 Asynchronous CMOS Static RAM
12	HM-6551-883	Intersil	256 x 4 CMOS RAM

HM-6508 - Intersil Corporation

HM-6508 1024 x 1 CMOS RAM

Features

Related Product