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The HM-6504/883 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On-chip latches are provided for addresses, data input and data output allowing efficient interfacing with microprocessor systems. The data output can be forced to a.
• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
• Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max
• Low Power Operation . . . . . . . . . . . . . 35mW/MHz Max
• Data Retention . . . . . . . . . . . . . . . . . . . . . . . at 2.0V Min
• TTL Compatible Input/Output
• Three-State Output
• Standard JEDEC Pinout
• Fast Access Time. . . . . . . . . . . . . . . . . . 120/200ns Max
• 18 Pin Package for High Density
• On-Chip Address Register
• Gated Inputs - No Pull Up or Pull Down Resistors Required
Ordering I.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HM-6504 |
Intersil Corporation |
4096 x 1 CMOS RAM |
|
| 2 | HM-6508 |
Intersil Corporation |
1024 x 1 CMOS RAM |
|
| 3 | HM-6508883 |
Intersil Corporation |
1024 x 1 CMOS RAM |
|
| 4 | HM-6514 |
Intersil Corporation |
1024 x 4 CMOS RAM |
|
| 5 | HM-6516 |
Intersil Corporation |
2K x 8 CMOS RAM |
|
| 6 | HM-6516-883 |
Intersil Corporation |
2K x 8 CMOS RAM |
|
| 7 | HM-65161 |
MHS |
2K X 8 General Purpose CMOS SRAM |
|
| 8 | HM-65162 |
Intersil Corporation |
2K x 8 Asynchronous CMOS Static RAM |
|
| 9 | HM-6518 |
Intersil Corporation |
1024 x 1 CMOS RAM |
|
| 10 | HM-6518883 |
Intersil Corporation |
1024 x 1 CMOS RAM |
|
| 11 | HM-65262 |
Intersil Corporation |
16K x 1 Asynchronous CMOS Static RAM |
|
| 12 | HM-6551-883 |
Intersil |
256 x 4 CMOS RAM |
|