HGTP11N120CN - Intersil Corporation

HGTP11N120CN N-Channel IGBT

HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet January 2000 File Number 4577.2 43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. .

Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49291. Features
• 43A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC
• Short Circuit Rating
• Low Conduc.