The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT i.
• 10A, 400V and 500V
• Latch Free Operation
• Typical Fall Time < 1.4µs
• High Input Impedance
• Low Conduction Loss
• Anti-Parallel Diode
• tRR < 60ns
Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. IGBTs are id.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HGTP10N40C1 |
Intersil Corporation |
N-Channel IGBT | |
2 | HGTP10N40C1D |
Intersil Corporation |
N-Channel IGBT | |
3 | HGTP10N40E1 |
Intersil Corporation |
N-Channel IGBT | |
4 | HGTP10N40E1D |
Intersil Corporation |
N-Channel IGBT | |
5 | HGTP10N120BN |
Fairchild Semiconductor |
N-Channel IGBT | |
6 | HGTP10N120BN |
Intersil Corporation |
N-Channel IGBT | |
7 | HGTP10N50C1 |
Intersil Corporation |
N-Channel IGBT | |
8 | HGTP10N50C1D |
Intersil Corporation |
N-Channel IGBT | |
9 | HGTP10N50E1 |
Intersil Corporation |
N-Channel IGBT | |
10 | HGTP10N50E1D |
Intersil Corporation |
N-Channel IGBT | |
11 | HGTP10N50F1D |
Intersil Corporation |
N-Channel IGBT | |
12 | HGTP11N120CN |
Fairchild Semiconductor |
N-Channel IGBT |