The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete anti-parallel diode that shunts current around the IGBT in the reverse direction without int.
• 10A, 400V and 500V
• VCE(ON): 2.5V Max.
• TFALL: 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• Anti-Parallel Diode
Applications
• Power Supplies
• Motor Drives
• Protective Circuits
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
Description
The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete anti-parallel diode that shunts current around the.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HGTP10N40C1 |
Intersil Corporation |
N-Channel IGBT | |
2 | HGTP10N40E1 |
Intersil Corporation |
N-Channel IGBT | |
3 | HGTP10N40E1D |
Intersil Corporation |
N-Channel IGBT | |
4 | HGTP10N40F1D |
Intersil Corporation |
N-Channel IGBT | |
5 | HGTP10N120BN |
Fairchild Semiconductor |
N-Channel IGBT | |
6 | HGTP10N120BN |
Intersil Corporation |
N-Channel IGBT | |
7 | HGTP10N50C1 |
Intersil Corporation |
N-Channel IGBT | |
8 | HGTP10N50C1D |
Intersil Corporation |
N-Channel IGBT | |
9 | HGTP10N50E1 |
Intersil Corporation |
N-Channel IGBT | |
10 | HGTP10N50E1D |
Intersil Corporation |
N-Channel IGBT | |
11 | HGTP10N50F1D |
Intersil Corporation |
N-Channel IGBT | |
12 | HGTP11N120CN |
Fairchild Semiconductor |
N-Channel IGBT |