HGTG30N120CN - Intersil Corporation

HGTG30N120CN N-Channel IGBT

HGTG30N120CN Data Sheet January 2000 File Number 4483.3 75A, 1200V, NPT Series N-Channel IGBT The HGTG30N120CN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low.

Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49281. Features
• 75A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150oC
• Short Circuit Rating
• Low Conduc.