HGTG30N60B3D Data Sheet January 2000 File Number 4446.2 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar tr.
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors..
HGTG30N60B3D, HGT4E30N60B3DS Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast.
UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 60 A, 600 V HGTG30N60B3D The HGTG30N60B3D is a MOS gated hi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HGTG30N60B3 |
Fairchild Semiconductor |
N-Channel IGBT | |
2 | HGTG30N60B3 |
Intersil Corporation |
N-Channel IGBT | |
3 | HGTG30N60B3 |
ON Semiconductor |
IGBT | |
4 | HGTG30N60 |
Fairchild Semiconductor |
600V Planar IGBT Chip | |
5 | HGTG30N60A4 |
Fairchild Semiconductor |
N-Channel IGBT | |
6 | HGTG30N60A4 |
Intersil Corporation |
N-Channel IGBT | |
7 | HGTG30N60A4 |
ON Semiconductor |
SMPS IGBT | |
8 | HGTG30N60A4D |
Fairchild Semiconductor |
N-Channel IGBT | |
9 | HGTG30N60A4D |
Intersil Corporation |
N-Channel IGBT | |
10 | HGTG30N60A4D |
ON Semiconductor |
N-Channel IGBT | |
11 | HGTG30N60C3 |
Intersil Corporation |
N-Channel IGBT | |
12 | HGTG30N60C3D |
Intersil Corporation |
N-Channel IGBT |