HGTG30N60A4 - ON Semiconductor

HGTG30N60A4 SMPS IGBT

The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications. Features • 60 A, 6.

Features

of high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications. Features
• 60 A, 600 V @ TC = 110°C
• Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 30 A
• Typical Fall Time: 58 ns at TJ = 125°C
• Low Conduction Loss
• This is a Pb−Free Device Applications
• UPS, Welder www.onsemi.com C G E EC G TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K G30N60A4 © Semicon.