The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT i.
• 20A, 500V
• Latch Free Operation
• Typical Fall Time < 500ns
• High Input Impedance
• Low Conduction Loss
• With Anti-Parallel Diode
• tRR < 60ns
Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. IGBTs are ideal .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HGTG20N100D2 |
Intersil Corporation |
N-Channel IGBT | |
2 | HGTG20N120 |
Intersil Corporation |
N-Channel IGBT | |
3 | HGTG20N120C3D |
Intersil Corporation |
N-Channel IGBT | |
4 | HGTG20N120CN |
Intersil Corporation |
N-Channel IGBT | |
5 | HGTG20N120CND |
Intersil Corporation |
N-Channel IGBT | |
6 | HGTG20N120E2 |
Intersil Corporation |
N-Channel IGBT | |
7 | HGTG20N60A4 |
Fairchild Semiconductor |
N-Channel IGBT | |
8 | HGTG20N60A4 |
Intersil Corporation |
N-Channel IGBT | |
9 | HGTG20N60A4 |
ON Semiconductor |
IGBT | |
10 | HGTG20N60A4D |
Fairchild Semiconductor |
N-Channel IGBT | |
11 | HGTG20N60A4D |
ON Semiconductor |
N-Channel IGBT | |
12 | HGTG20N60B3 |
Fairchild Semiconductor |
N-Channel IGBT |