The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT i.
• 12A, 600V
• Latch Free Operation
• Typical Fall Time <500ns
• Low Conduction Loss
• With Anti-Parallel Diode
• tRR < 60ns
Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. The IGBTs are ideal for many high voltag.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HGTG12N60D1 |
Intersil Corporation |
N-Channel IGBT | |
2 | HGTG12N60A4 |
Fairchild Semiconductor |
N-Channel IGBT | |
3 | HGTG12N60A4 |
Intersil Corporation |
N-Channel IGBT | |
4 | HGTG12N60A4D |
Fairchild Semiconductor |
N-Channel IGBT | |
5 | HGTG12N60A4D |
Intersil Corporation |
N-Channel IGBT | |
6 | HGTG12N60A4D |
ON Semiconductor |
N-Channel IGBT | |
7 | HGTG12N60B3 |
Fairchild Semiconductor |
N-Channel IGBT | |
8 | HGTG12N60B3D |
Fairchild Semiconductor |
N-Channel IGBT | |
9 | HGTG12N60B3D |
Intersil Corporation |
N-Channel IGBT | |
10 | HGTG12N60C3D |
Fairchild Semiconductor |
N-Channel IGBT | |
11 | HGTG12N60C3D |
Intersil Corporation |
N-Channel IGBT | |
12 | HGTG12N60C3D |
Harris Corporation |
UFS Series N-Channel IGBT |