HGTG12N60B3 - Fairchild Semiconductor

HGTG12N60B3 N-Channel IGBT

HGTG12N60B3 Data Sheet August 2003 27A, 600V, UFS Series N-Channel IGBTs This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only m.

Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49171. Features
• 27A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time..