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HGTG12N60D1D |
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| Part Number | HGTG12N60D1D |
| Manufacturer | Intersil Corporation |
| Description | The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conductio... |
| Features |
• 12A, 600V • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. The IGBTs are ideal for many high voltag... |
| Document |
 HGTG12N60D1D Data Sheet
PDF 36.74KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HGTG12N60D1 |
Intersil Corporation |
N-Channel IGBT |
|
| 2 | HGTG12N60A4 |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 3 | HGTG12N60A4 |
Intersil Corporation |
N-Channel IGBT |
|
| 4 | HGTG12N60A4D |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 5 | HGTG12N60A4D |
Intersil Corporation |
N-Channel IGBT |
|