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HFS8N65S Sep 2009 HFS8N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 1.16 ȍ ID = 7.2 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(ON.
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.16 ȍ (Typ.) @VGS=10V 100% Avalanche Tested
TO-220F
123
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ఁ͚
– Continuous (TC = 100ఁ͚
– Pulsed
(Note 1)
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HFS8N65U |
SemiHow |
N-Channel MOSFET |
|
| 2 | HFS8N60S |
SemiHow |
N-Channel MOSFET |
|
| 3 | HFS8N60U |
SemiHow |
N-Channel MOSFET |
|
| 4 | HFS8N70S |
SemiHow |
N-Channel MOSFET |
|
| 5 | HFS8N70U |
SemiHow |
N-Channel MOSFET |
|
| 6 | HFS8N80 |
SemiHow |
N-Channel MOSFET |
|
| 7 | HFS8 |
HF |
I/O module |
|
| 8 | HFS830 |
SemiHow |
N-Channel MOSFET |
|
| 9 | HFS840 |
SemiHow |
N-Channel MOSFET |
|
| 10 | HFS10N60S |
SemiHow |
N-Channel MOSFET |
|
| 11 | HFS10N60U |
SemiHow |
N-Channel MOSFET |
|
| 12 | HFS10N65S |
SemiHow |
N-Channel MOSFET |
|