HFS8N80 Dec 2010 HFS8N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 1.55 ȍ ID = 8.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) .
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.55 ȍ (Typ.) @VGS=10V 100% Avalanche Tested
TO-220F
123
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ఁ͚
– Continuous (TC = 100ఁ͚
– Pulsed
(Note 1)
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HFS8N60S |
SemiHow |
N-Channel MOSFET | |
2 | HFS8N60U |
SemiHow |
N-Channel MOSFET | |
3 | HFS8N65S |
SemiHow |
N-Channel MOSFET | |
4 | HFS8N65U |
SemiHow |
N-Channel MOSFET | |
5 | HFS8N70S |
SemiHow |
N-Channel MOSFET | |
6 | HFS8N70U |
SemiHow |
N-Channel MOSFET | |
7 | HFS8 |
HF |
I/O module | |
8 | HFS830 |
SemiHow |
N-Channel MOSFET | |
9 | HFS840 |
SemiHow |
N-Channel MOSFET | |
10 | HFS10N60S |
SemiHow |
N-Channel MOSFET | |
11 | HFS10N60U |
SemiHow |
N-Channel MOSFET | |
12 | HFS10N65S |
SemiHow |
N-Channel MOSFET |