HFS8N65S |
Part Number | HFS8N65S |
Manufacturer | SemiHow |
Description | HFS8N65S Sep 2009 HFS8N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 1.16 ȍ ID = 7.2 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technolo... |
Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.16 ȍ (Typ.) @VGS=10V 100% Avalanche Tested
TO-220F
123
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ఁ͚ – Continuous (TC = 100ఁ͚ – Pulsed (Note 1) ... |
Document |
HFS8N65S Data Sheet
PDF 251.84KB |
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