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HFS12N65U HFS12N65U 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.67 ȍ 7S #9GS=10V 100% Avalanche Tested July .
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.67 ȍ 7S #9GS=10V 100% Avalanche Tested
July 2014
BVDSS = 650 V RDS(on) typ = 0.67 ȍ ID = 12 A
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HFS12N65S |
SemiHow |
N-Channel MOSFET |
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| 2 | HFS12N60S |
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N-Channel MOSFET |
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| 3 | HFS12N60U |
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N-Channel MOSFET |
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| 4 | HFS10N60S |
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| 5 | HFS10N60U |
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N-Channel MOSFET |
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| 6 | HFS10N65S |
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N-Channel MOSFET |
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| 7 | HFS10N65U |
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| 8 | HFS10N80 |
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| 9 | HFS11N40 |
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400V N-Channel MOSFET |
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| 10 | HFS11N80Z |
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| 11 | HFS13N50S |
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| 12 | HFS13N50U |
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