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HFS10N65U |
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| Part Number | HFS10N65U |
| Manufacturer | SemiHow |
| Description | HFS10N65U HFS10N65U 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switchi... |
| Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.8 ȍ 7S #9GS=10V 100% Avalanche Tested
Oct 2013
BVDSS = 650 V RDS(on) typ = 0.8 ȍ ID = 9.5 A
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC =... |
| Document |
 HFS10N65U Data Sheet
PDF 302.52KB |
| Distributor | Stock | Price | Buy |
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