Inductors RF TESTSFRCMRFUDAEMRMCXQRIAIUNRMEXEIEQUMNINSMMTUMCIUSMR(IYNMTOAA((IHMMTM(NmMIUHHNCASMzzGE)))) INDDUACSTOTHALNNEUCRMEABN(EnCRHE*) SERIES HF1008R HF1008 Unshielded Surface Mount Inductors Actual Size Physical Parameters Inches Millimeters A 0.095 to 0.115 2.41 to 2.92 B 0.085 to 0.105 2.16 to 2.66 C 0.075 to 0.095 1.91 to 2.41 D 0.0.
s max.; 13" reel, 7000 pieces max. Made In the U.S.A. -047M -082M -100M -120M -150M -180M -220M -270M -330M -390M -470M -560K -680K -820K -101K -121K -151K -181K -221K -271K -331K -391K -471K -561K -621K -681K -751K -821K -911K -102K -122K -152K -182K -222K -272K -332K -392K -472K SERIES HF1008 NON-MAGNETIC CORE 4.7 ±20% 40 50 >3000 0.070 8.2 ±20% 40 50 >3000 0.075 10.0 ±20% 30 50 >3000 0.080 12.0 ±20% 30 50 2700 0.105 15.0 ±20% 30 50 2400 0.110 18.0 ±20% 30 50 2250 0.130 22.0 ±20% 30 50 2000 0.135 27.0 ±20% 30 50 1800 0.140 33.0 ±20% 30 50 1600 0.150 39.0 ±20% 30 50 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HF100-12 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR | |
2 | HF100-28 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR | |
3 | HF1008R |
Delevan |
Unshielded Surface Mount Inductors | |
4 | HF10-12F |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR | |
5 | HF10-12S |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR | |
6 | HF102F |
Hongfa Technology |
MINIATURE HIGH POWER RELAY | |
7 | HF105F-1 |
Hongfa Technology |
MINIATURE HIGH POWER RELAY | |
8 | HF105F-2 |
Hongfa Technology |
MINIATURE HIGH POWER RELAY | |
9 | HF105F-4 |
Hongfa Technology |
MINIATURE HIGH POWER RELAY | |
10 | HF10FF |
Hongfa Technology |
MINIATURE HIGH POWER RELAY | |
11 | HF10FH |
Hongfa Technology |
MINIATURE HIGH POWER RELAY | |
12 | HF10N60 |
ETC |
N-Channel MOSFET |