The ASI HF10-12F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: • PG = 20 dB min. at 10 W/30 MHz • IMD3 = -30 dBc max. at 10 W (PEP) • Omnigold™ Metalization System F E B C D E C E Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ T STG θ JC 4.5 A 36 V 18 V 4.0 V 80 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C .
• PG = 20 dB min. at 10 W/30 MHz
• IMD3 = -30 dBc max. at 10 W (PEP)
• Omnigold™ Metalization System
F
E B
C D E
C E
Ø.125 NOM. FULL R J .125
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ T STG θ JC 4.5 A 36 V 18 V 4.0 V 80 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 2.2 OC/W
O O O
DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM
inches / mm
G
H I
MAXIMUM
inches / mm
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64
.230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48
ORDER CODE: ASI10592
CHAR.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HF10-12S |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR | |
2 | HF100-12 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR | |
3 | HF100-28 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR | |
4 | HF1008 |
Delevan |
Unshielded Surface Mount Inductors | |
5 | HF1008R |
Delevan |
Unshielded Surface Mount Inductors | |
6 | HF102F |
Hongfa Technology |
MINIATURE HIGH POWER RELAY | |
7 | HF105F-1 |
Hongfa Technology |
MINIATURE HIGH POWER RELAY | |
8 | HF105F-2 |
Hongfa Technology |
MINIATURE HIGH POWER RELAY | |
9 | HF105F-4 |
Hongfa Technology |
MINIATURE HIGH POWER RELAY | |
10 | HF10FF |
Hongfa Technology |
MINIATURE HIGH POWER RELAY | |
11 | HF10FH |
Hongfa Technology |
MINIATURE HIGH POWER RELAY | |
12 | HF10N60 |
ETC |
N-Channel MOSFET |