HF100-12 - Advanced Semiconductor

HF100-12 NPN SILICON RF POWER TRANSISTOR

The ASI HF100-12 is Designed for PACKAGE STYLE .500 4L FLG .112x45° A FULL R Ø.125 NOM. L FEATURES: • PG = 12 dB min. at 100 W/30 MHz • IMD3 = -30 dBc max. at 100 W (PEP) • Omnigold™ Metalization System C B E H D G F K MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ T STG θ JC O O I J 20 A 36 V 18 V 4.0 V 290 W @ TC = 25 OC -65 C to +200 C -65 C to +150 .

Features

• PG = 12 dB min. at 100 W/30 MHz
• IMD3 = -30 dBc max. at 100 W (PEP)
• Omnigold™ Metalization System C B E H D G F K MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ T STG θ JC O O I J 20 A 36 V 18 V 4.0 V 290 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 0.6 OC/W O O DIM A B C D E F G H I J K L MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980 / 24.89 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 .