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HCS7N70S HCS7N70S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche .
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested
November 2014
BVDSS = 700 V RDS(on) typ = 0.95 ȍ ID = 5 A
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID IDM VGS
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Cont.
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|---|---|---|---|---|
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| 2 | HCS70R360S |
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| 3 | HCS70R600S |
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| 4 | HCS70R660S |
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| 5 | HCS74MS |
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| 7 | HCS00MS |
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| 8 | HCS02MS |
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| 9 | HCS04MS |
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| 10 | HCS05MS |
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