HCS70R360S HCS70R360S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avala.
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested
March 2015
BVDSS = 700 V RDS(on) typ = 0.32 ȍ ID = 11 A
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID IDM VGS
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Conti.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HCS70R350E |
SemiHow |
700V N-Channel Super Junction MOSFET | |
2 | HCS70R600S |
SemiHow |
N-Channel Super Junction MOSFET | |
3 | HCS70R660S |
SemiHow |
N-Channel Super Junction MOSFET | |
4 | HCS74MS |
Intersil Corporation |
Radiation Hardened Dual-D Flip-Flop | |
5 | HCS74T |
Intersil Corporation |
Radiation Hardened Dual-D Flip-Flop | |
6 | HCS7N70S |
SemiHow |
N-Channel Super Junction MOSFET | |
7 | HCS00MS |
Intersil Corporation |
Radiation Hardened Quad 2-Input NAND Gate | |
8 | HCS02MS |
Intersil Corporation |
Radiation Hardened Quad 2-Input NOR Gate | |
9 | HCS04MS |
Intersil Corporation |
Radiation Hardened Hex Inverter | |
10 | HCS05MS |
Intersil Corporation |
Radiation Hardened Hex Inverter with Open Drain | |
11 | HCS08 |
Freescale Semiconductor |
Microcontrollers | |
12 | HCS0805 |
HITANO |
METAL STRIP CURRENT SENSING RESISTORS |