only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its.
• QML Class T, Per MIL-PRF-38535
• Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si) - Latch-Up Free Under Any Conditions, SOS Process - SEP Effective LET No Upsets: >100 MEV-cm2/mg - Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
• 3 Micron Radiation Hardened SOS CMOS
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min
• Input Current Levels Ii ≤ 5µA at VOL, VOH
Specifications
Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HCS74MS |
Intersil Corporation |
Radiation Hardened Dual-D Flip-Flop | |
2 | HCS70R350E |
SemiHow |
700V N-Channel Super Junction MOSFET | |
3 | HCS70R360S |
SemiHow |
N-Channel Super Junction MOSFET | |
4 | HCS70R600S |
SemiHow |
N-Channel Super Junction MOSFET | |
5 | HCS70R660S |
SemiHow |
N-Channel Super Junction MOSFET | |
6 | HCS7N70S |
SemiHow |
N-Channel Super Junction MOSFET | |
7 | HCS00MS |
Intersil Corporation |
Radiation Hardened Quad 2-Input NAND Gate | |
8 | HCS02MS |
Intersil Corporation |
Radiation Hardened Quad 2-Input NOR Gate | |
9 | HCS04MS |
Intersil Corporation |
Radiation Hardened Hex Inverter | |
10 | HCS05MS |
Intersil Corporation |
Radiation Hardened Hex Inverter with Open Drain | |
11 | HCS08 |
Freescale Semiconductor |
Microcontrollers | |
12 | HCS0805 |
HITANO |
METAL STRIP CURRENT SENSING RESISTORS |