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HCS20NT60V N-Channel MOSFET

HCS20NT60V Apr 2014 HCS20NT60V 600V N-Channel Super Junction MOSFET BVDSS = 600 V RDS(on) typ = 0.17 ȍ ID = 20 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 54 nC (Typ.) ‰ Extended Safe Operating A.

Features

‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 54 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.17 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested ‰ RoHS Compliant TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current
  – Continuous (TC = 25୅)
  – Continuous (TC = 100୅)
  – P.

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