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HCS20NT60V |
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| Part Number | HCS20NT60V |
| Manufacturer | SemiHow |
| Description | HCS20NT60V Apr 2014 HCS20NT60V 600V N-Channel Super Junction MOSFET BVDSS = 600 V RDS(on) typ = 0.17 ȍ ID = 20 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust G... |
| Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 54 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.17 ȍ 7S #9GS=10V 100% Avalanche Tested RoHS Compliant
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25) – Continuous (TC = 100) – P... |
| Document |
 HCS20NT60V Data Sheet
PDF 379.16KB |
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