only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its.
• QML Class T, Per MIL-PRF-38535
• Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si) - Latch-Up Free Under Any Conditions - SEP Effective LET No Upsets: >100 MEV-cm2/mg - Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
• 3 Micron Radiation Hardened CMOS SOS
• Fanout (Over Temperature Range)
• Bus Driver Outputs - 15 LSTTL Loads
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels - VIL = 0.3 VCC Max - VIH = 0.7 VCC Min
• Input Current Levels Ii ≤ 5µA at VOL, VOH
Specifications
Specifications for Rad Hard QML de.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HCS244MS |
Intersil Corporation |
Radiation Hardened Octal Buffer/Line Driver/ Three-State | |
2 | HCS240MS |
Intersil Corporation |
Radiation Hardened Octal Buffer/Line Driver | |
3 | HCS241MS |
Intersil Corporation |
Radiation Hardened Inverting Octal Three-State Buffer/Line Driver | |
4 | HCS245MS |
Intersil Corporation |
Radiation Hardened Octal Bus Transceiver/ Three-State/ Non-Inverting | |
5 | HCS200 |
Microchip Technology |
KEELOQ CODE HOPPING ENCODER | |
6 | HCS201 |
Microchip Technology |
KEELOQ Code Hopping Encoder | |
7 | HCS20MS |
Intersil Corporation |
Radiation Hardened Dual 4-Input NAND Gate | |
8 | HCS20NT60V |
SemiHow |
N-Channel MOSFET | |
9 | HCS21MS |
Intersil Corporation |
Radiation Hardened Dual 4-Input AND Gate | |
10 | HCS2512 |
HITANO |
METAL STRIP CURRENT SENSING RESISTORS | |
11 | HCS253MS |
Intersil Corporation |
Radiation Hardened Dual 4-Input Multiplexer | |
12 | HCS273MS |
Intersil Corporation |
Radiation Hardened Octal D Flip-Flop |