HB56D836BR - Hitachi Semiconductor

HB56D836BR High Density Dynamic RAM Module

The HB56D836BR/SBR is a 8M × 36 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM (HM5117400) sealed in SOJ package and 8 pieces of 4-Mbit DRAM (HM514100) sealed in SOJ package. The HB56D436BR/SBR is a 4M × 36 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM (HM5117400) sealed in SOJ package and 4 pieces of 4-Mbit DRAM (HM514100) sealed in SOJ packag.

Features

• 72-pin single in-line package  Outline: 107.95 mm (Length) × 31.75/25.40 mm (Height) × 9.14 mm (Thickness)  Lead pitch: 1.27 mm
• Single 5 V (±5%) supply
• High speed  Access time: tRAC = 60/70ns (max)
• Low power dissipation  Active mode: 6.41/5.78 W (max) (HB56D836BR/SBR Series) 6.09/5.46 W (max) (HB56D436BR/SBR Series)  Standby mode (TTL): 252 mW (max) (HB56D836BR/SBR Series) (TTL): 126 mW (max) (HB56D436BR/SBR Series) (CMOS): 16.8 mW (max) (L-version) (HB56D836BR/SBR Series) (CMOS): 8.4 mW (max) (L-version) (HB56D436BR/SBR Series)
• Fast page mode capability
• Refresh period  2048 .