HB56D473EJ-6 - Hitachi Semiconductor

HB56D473EJ-6 High Density Dynamic RAM Module

The HB56D473EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The HB56D473EJ is a 4M × 72 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM (HM5117400) sealed in SOJ package and 8 pieces of 4-Mbit DRAM (HM514100) sealed in SOJ package, 1 piec.

Features

• 168-pin socket type package (Dual lead out)  Outline: 133.35 mm (Length) × 25.40 mm (Height) × 9.00 mm (Thickness)  Lead pitch: 1.27 mm
• Single 5 V (±5%) supply
• High speed  Access time: tRAC = 60/70 ns (max) tCAC = 20/25 ns (max)
• Low power dissipation  Active mode: 12.5/11.3 W (max)  Standby mode (TTL): 588 mW (max) (CMOS): 462 mW (max)
• Buffered input except RAS and DQ
• 4 byte interleave enabled, dual address input (A0/B0)
• JEDEC standard outline buffered 8-byte DIMM
• Fast page mode capability
• 2,048 refresh cycles: 32 ms HB56D473EJ Series
• 2 variations of refresh  RAS-onl.