The HB56D473EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The HB56D473EJ is a 4M × 72 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM (HM5117400) sealed in SOJ package and 8 pieces of 4-Mbit DRAM (HM514100) sealed in SOJ package, 1 piec.
• 168-pin socket type package (Dual lead out) Outline: 133.35 mm (Length) × 25.40 mm (Height) × 9.00 mm (Thickness) Lead pitch: 1.27 mm
• Single 5 V (±5%) supply
• High speed
Access time: tRAC = 60/70 ns (max) tCAC = 20/25 ns (max)
• Low power dissipation Active mode: 12.5/11.3 W (max) Standby mode (TTL): 588 mW (max) (CMOS): 462 mW (max)
• Buffered input except RAS and DQ
• 4 byte interleave enabled, dual address input (A0/B0)
• JEDEC standard outline buffered 8-byte DIMM
• Fast page mode capability
• 2,048 refresh cycles: 32 ms
HB56D473EJ Series
• 2 variations of refresh RAS-onl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HB56D473EJ-6 |
Hitachi Semiconductor |
High Density Dynamic RAM Module | |
2 | HB56D436BR |
Hitachi Semiconductor |
High Density Dynamic RAM Module | |
3 | HB56D436SBR |
Hitachi Semiconductor |
High Density Dynamic RAM Module | |
4 | HB56D136 |
Hitachi Semiconductor |
High Density Dynamic RAM Module | |
5 | HB56D136BW |
Hitachi Semiconductor |
High Density Dynamic RAM Module | |
6 | HB56D836BR |
Hitachi Semiconductor |
High Density Dynamic RAM Module | |
7 | HB56D836SBR |
Hitachi Semiconductor |
High Density Dynamic RAM Module | |
8 | HB56A132 |
Hitachi Semiconductor |
High Density Dynamic RAM Module | |
9 | HB56A132BU |
Hitachi Semiconductor |
High Density Dynamic RAM Module | |
10 | HB56A132BW |
Hitachi Semiconductor |
High Density Dynamic RAM Module | |
11 | HB56A132SBW |
Hitachi Semiconductor |
High Density Dynamic RAM Module | |
12 | HB56A440BR |
Hitachi Semiconductor |
(HB56A840BR / HB56A440BR) 40-Bit High Density DRAM Module |